E SC 550
Power Semiconductor Devices (3) Power electronic devices: Physics of operation, materials, architectural design, processing, reliability of operations, reliability with applications and challenges.
E SC 550 Power Semiconductor Devices (3)
The design and operation, of the emerging transformative power semiconductor devices, is founded on basic quantum mechanics and solid state physics principles. Power Semiconductor Devices, PSDs, handle high currents, high voltages and operate at high temperatures. Consequently, PSDs are complex in design, and challenging in long-term reliability. We study the fundamentals of PSDs architecture, processing, reliability, materials and characterization. We study Schottky- and P-i-N- rectifiers, the low power range MOSFETs transistors, the middle power range IGBT transistors, and high power range Thyristors. It is estimated that more than 50% of world electricity passes through power semiconductor devices; hence, optimizing the performance and reliability of these emerging power devices coupled with advancing power materials processing may lead to significant future energy savings. The subject matter is appropriate to students of physical sciences, electrical and materials engineering; in addition to broadening their knowledge base, it exposes them to this frontier research area and a new career-path option.
Note : Class size, frequency of offering, and evaluation methods will vary by location and instructor. For these details check the specific course syllabus.